NVMe1.4 protocol, TLC3DNAND technology, LDPC error correction mechanism, and HMB host memory buffer technology, the efficient combination brings a flying experience
Sequential read speed up to: 3300MB/s
Sequential write speed up to: 3000MB/s
Specs
NVMe M.2(512GB、1TB)
Sequential reads up to: 3300MB/s and sequential reads up to: 3000MB/s
Transfer speed is upgraded again with amazing performance
HMB technology (full name HostMemoryBuffer, host memory buffer technology), in the absence of DRAM flash memory, with the help of the host's memory (memory) high-speed read and write to build a FTL, thus achieving high read and write performance.
Yangtze Memory TLC 3D NAND
The third generation 3D NAND flash particles (model: X2-9060) from Yangtze Memory are strictly selected for their strong performance, reliable quality and superior quality. With the more advanced Xtacking2.0 technology architecture, Yangtze Memory 3D NAND has higher IO transfer speed, higher density, and excellent performance in various tests.
Fast response without lag
Easy response to office design, game loading and other operations
Compact and slim design
With a single-sided design and a thickness of only 0.83mm, the BCP board is not only suitable for conventional desktop computers, but also flexible for installation in ultra-thin notebooks.
Five-year warranty for safety and reliability
After rigorous screening tests to ensure the durability of the product, MTBF reached 1.5 million hours; total bytes written reached 600TBW.